Performance characteristics of p-channel FinFETs with varied Si-fin extension lengths for source and drain contacts
نویسندگان
چکیده
منابع مشابه
Ultrashort channel silicon nanowire transistors with nickel silicide source/drain contacts.
We demonstrate the shortest transistor channel length (17 nm) fabricated on a vapor-liquid-solid (VLS) grown silicon nanowire (NW) by a controlled reaction with Ni leads on an in situ transmission electron microscope (TEM) heating stage at a moderate temperature of 400 °C. NiSi(2) is the leading phase, and the silicide-silicon interface is an atomically sharp type-A interface. At such channel l...
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Full–band Monte Carlo simulations are performed for n–type FinFETs as well as for unstrained–Si and strained–Si fully–depleted (FD) SOI–MOSFETs. Gate lengths of 50 nm down to 10 nm are considered, and a fixed off–current of 100 nA/μm is in each case ensured by adjusting the silicon film thickness. The FinFET shows the best scaling trend, but the strained–Si FDSOI–MOSFET always involves the larg...
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As device dimensions shrink into the nanometer range, power and performance constraints prohibit the longevity of traditional MOS devices in circuit design. A finFET, a quasi-planar double-gated device, has emerged as a replacement. FinFETs are formed by creating a silicon fin which protrudes out of the wafer, wrapping a gate around the fin, and then doping the ends of the fin to form the sourc...
متن کاملBulk FinFETs: Design at 14 nm Node and Key Characteristics
© Springer Science+Business Media Dordrecht 2016 C.-M. Kyung (ed.), Nano Devices and Circuit Techniques for Low-Energy Applications and Energy Harvesting, KAIST Research Series, DOI 10.1007/978-94-017-9990-4_2 Abstract In contrast to conventional 2-D MOSFETs, FinFETs are able to be scaled down to 20 nm and beyond, and have superior performance. There are two types of FinFETs:SOI FinFETs and bul...
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ژورنال
عنوان ژورنال: Физика и техника полупроводников
سال: 2017
ISSN: 0015-3222
DOI: 10.21883/ftp.2017.12.45190.8421